CAPACITANCE HEATING BENEFITS

Uniform Wafer Heating (2" - 300mm Substrates)

• Accurate Wafer Temperature Control: < 1°C / wafer
• Superior Transient Temperature Control: Fast energy transfer (speed of light) > 25°C / sec ramp rates

Benign Process to Semiconductors

• No change to device parameters
• Arcing and thermal runaway is eliminated